features ezbright led technology 200 mw min. - 450, 460 & 470 nm 300 mw min. - 450, 460 & 470 nm 80 mw min. - 527 nm 130 mw min. - 527 nm lambertian radiation conductive epoxy, solder paste or preforms, or flux eutectic attach thin 100 m chip low forward voltage ? C C C C ? ? ? ? applications general illumination aircraft decorative lighting task lighting outdoor illumination white leds lcd backlighting projection displays automotive ? C C C C ? ? ? ? cree ? ez000? leds data sheet c xxx ez000-s xx 000 crees ezbright? leds are the next generation of solid-state led emitters that combine highly effcient ingan materials with crees proprietary optical design and device submount technology to deliver superior value for high- intensity leds. the optical design maximizes light extraction effciency and enables a lambertian radiation pattern. additionally, these leds are die-attachable with conductive epoxy, solder paste or solder preforms, as well as the fux eutectic method. these vertically structured, low forward voltage led chips are approximately 100 microns in height. crees ez? chips are tested for conformity to optical and electrical specifcations. these leds are useful in a broad range of applications such as general illumination, automotive lighting, and lcd backlighting. c xxx ez000-s xx 000 chip diagram d a t a s h e e t : c p r 3 c r r e v . a top view bottom view die cross section ezbright led 980 x 980 m 2 gold bond pads (2) 130 x 130 m 2 backside metalization cathodes (-) t = 100 m anode (+) 3 m ausn subject to change without notice. www.cree.com
copyright ? 2006 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright. ez1000 and ez are trademarks of cree, inc. cpr3cr rev. a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com maximum ratings at t a = 5c note c xxx ez000-s xx 000 dc forward current 1000 ma peak forward current (1/10 duty cycle @ 1 khz) 1250 ma led junction temperature 145c reverse voltage 5 v operating temperature range -40c to +100c storage temperature range -40c to +125c typical electrical/optical characteristics at t a = 5c, if = 350 ma note part number forward voltage (v f , v) reverse current [i(vr=5v), a] full width half max ( d , nm) min. typ. max. max. typ. c450ez1000-s xx 000 2.9 3.3 3.8 2 20 c460ez1000-s xx 000 2.9 3.3 3.8 2 21 c470ez1000-s xx 000 2.9 3.3 3.8 2 22 c527ez1000-s xx 000 3.1 3.5 4.0 2 35 mechanical specifcations c xxx ez000-s xx 000 description dimensions tolerance p-n junction area (m) 950 x 950 25 chip area (m) 980 x 980 25 chip thickness (m) 100 25 top au bond pad (m) - qty. 2 130 x 130 +25/-10 au bond pad thickness (m) 3.0 1.0 back contact metal area (m) 980 x 980 25 back contact metal thickness (m) 3.0 1.0 notes: maximum ratings are package-dependent. the above ratings were determined using a au-plated to39 header without an encapsulant for characterization. ratings for other packages may differ. the junction temperature should be characterized in a specifc package to determine limitations. assembly processing temperature must not exceed 325c (< 5 seconds). see cree ezbright applications note for assembly-process information. all products conform to the listed minimum and maximum specifcations for electrical and optical characteristics when assembled and operated at 350 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are within the range of average values expected by the manufacturer in large quantities and are provided for information only. all measurements were made using a au-plated to39 header without an encapsulant. optical characteristics were measured in an integrating sphere using illuminance e. 1. 2.
copyright ? 2006 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright. ez1000 and ez are trademarks of cree, inc. 3 cpr3cr rev. a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com standard bins for c xxx ez000-s xx 000 led chips are sorted to the radiant fux and dominant wavelength bins shown. a sorted die sheet contains die from only one bin. sorted die kit (c xxx ez1000-s xx000 ) orders may be flled with any or all bins (c xxx ez1000-0 xxx ) contained in the kit. all radiant fux and dominant wavelength values shown and specifed are at if = 350 ma. radiant fux values are measured using au-plated to39 headers without an encapsulant. blue ez000 ez-00 c450ez000-s0000 c450ez1000-0113 c450ez1000-0114 c450ez1000-0115 c450ez1000-0116 c450ez1000-0109 c450ez1000-0110 c450ez1000-0111 c450ez1000-0112 c450ez1000-0105 c450ez1000-0106 c450ez1000-0107 c450ez1000-0108 300 mw 270 mw 240 mw 200 mw dominant wavelength radiant flux 447.5 nm 450 nm 452.5 nm 445 nm 455 nm c460ez000-s0000 c460ez1000-0113 c460ez1000-0114 c460ez1000-0115 c460ez1000-0116 c460ez1000-0109 c460ez1000-0110 c460ez1000-0111 c460ez1000-0112 c460ez1000-0105 c460ez1000-0106 c460ez1000-0107 c460ez1000-0108 dominant wavelength radiant flux 300 mw 270 mw 240 mw 200 mw 457.5 nm 460 nm 462.5 nm 455 nm 465 nm c470ez000-s0000 c470ez1000-0113 c470ez1000-0114 c470ez1000-0115 c470ez1000-0116 c470ez1000-0109 c470ez1000-0110 c470ez1000-0111 c470ez1000-0112 c470ez1000-0105 c470ez1000-0106 c470ez1000-0107 c470ez1000-0108 dominant wavelength radiant flux 300 mw 270 mw 240 mw 200 mw 467.5 nm 470 nm 472.5 nm 465 nm 475 nm
copyright ? 2006 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright. ez1000 and ez are trademarks of cree, inc. 4 cpr3cr rev. a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com c450ez000-s30000 c450ez1000-0121 c450ez1000-0122 c450ez1000-0123 c450ez1000-0124 c450ez1000-0117 c450ez1000-0118 c450ez1000-0119 c450ez1000-0120 380 mw 340 mw 300 mw dominant wavelength radiant flux 447.5 nm 450 nm 452.5 nm 445 nm 455 nm ez-300 c460ez000-s30000 c460ez1000-0121 c460ez1000-0122 c460ez1000-0123 c460ez1000-0124 c460ez1000-0117 c460ez1000-0118 c460ez1000-0119 c460ez1000-0120 380 mw 340 mw 300 mw dominant wavelength radiant flux 457.5 nm 460 nm 462.5 nm 455 nm 465 nm c470ez000-s30000 c470ez1000-0121 c470ez1000-0122 c470ez1000-0123 c470ez1000-0124 c470ez1000-0117 c470ez1000-0118 c470ez1000-0119 c470ez1000-0120 380 mw 340 mw 300 mw dominant wavelength radiant flux 467.5 nm 470 nm 472.5 nm 465 nm 475 nm green ez000 ez-80 c57ez000-s08000 c527ez1000-0111 c527ez1000-0112 c527ez1000-0113 c527ez1000-0108 c527ez1000-0109 c527ez1000-0110 c527ez1000-0105 c527ez1000-0106 c527ez1000-0107 520 nm 525 nm 530 nm 535 nm 130 mw 115 mw 100 mw 80 mw dominant wavelength radiant flux standard bins for c xxx ez000-s xx 000 (continued) ez-30 c57ez000-s3000 c527ez1000-0114 c527ez1000-0115 c527ez1000-0116 520 nm 525 nm 530 nm 535 nm 150 mw 130 mw dominant wavelength radiant flux
copyright ? 2006 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright. ez1000 and ez are trademarks of cree, inc. 5 cpr3cr rev. a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com characteristic curves, t a = 5c this is a representative measurement for the ez1000 led product. actual curves will vary slightly for the various radiant fux and dominant wavelength bins. 70% 75% 80% 85% 90% 95% 100% 25 50 75 100 125 150 junction temperature (c) relative light intensity (%) 460nm 527nm relative light intensity vs junction temperature forward current vs forward voltage 0 100 200 300 400 500 600 700 800 900 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 vf (v) if (ma) 460nm 527nm -2.0 -1.0 0.0 1.0 2.0 3.0 4.0 25 50 75 100 125 150 junction temperature (c) wavelength shift (nm) 460nm 527nm dominant wavelength shift vs junction temperatur e relative intensity vs forward current 0 20 40 60 80 100 120 140 160 180 200 220 0 100 200 300 400 500 600 700 800 900 1000 if (ma) % relative intensity 460nm 527nm -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 10.0 0 100 200 300 400 500 600 700 800 900 1000 if (ma) shift (nm) 460nm 527nm dominant wavelength shift vs forward current voltage shift vs junction temperature -0.4 -0.3 -0.2 -0.1 0.0 25 50 75 100 125 150 junction temperature (c) voltage shift (v) 460nm 527nm
copyright ? 2006 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright. ez1000 and ez are trademarks of cree, inc. 6 cpr3cr rev. a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com radiation pattern this is a representative radiation pattern for the ezbright power chip led product. actual patterns will vary slightly for each chip.
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